E2L0045-17-Y1
隆 Semiconductor
隆 Semiconductor
MSM5432126/8
DESCRIPTION
This version: Jan. 1998
MSM5432126/8
Previous version: Dec. 1996
e
Pr
lim
y
ar
in
131,072-Word
樓
32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word
樓
32-bit
configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate
process technology. The device operates with a single 5 V power supply.
FEATURES
鈥?131,072-word
樓
32-bit organization
鈥?Single 5 V power supply,
鹵10%
tolerance
鈥?Refresh: 512 cycles/8 ms
鈥?Fast Page Mode with Extended Data Out (EDO)
鈥?Write per bit (MSM5432128 only)
鈥?Byte write, Byte read
鈥?/div>
RAS
only refresh
鈥?/div>
CAS
before
RAS
refresh
鈥?Hidden refresh
鈥?Package:
64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K)
(Product : MSM5432126-xxGS-K)
(Product : MSM5432128-xxGS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5432126/8-45
MSM5432126/8-50
MSM5432126/8-60
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
45 ns 23 ns 13 ns 13 ns
50 ns 25 ns 15 ns 15 ns
60 ns 30 ns 18 ns 18 ns
Cycle Time
(Min.)
100 ns
110 ns
130 ns
Power Dissipation
Operating (Max.) Standby (Max.)
935 mW
907 mW
880 mW
11 mW
1/24
next