E2L0015-17-Y1
隆 Semiconductor
隆 Semiconductor
MSM518122
131,072-Word
樓
8-Bit Multiport DRAM
This version: Jan. 1998
MSM518122
Previous version: Dec. 1996
DESCRIPTION
The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit
dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and
asynchronously.
The MSM518122 supports three types of operation : random access to RAM port, high speed
serial access to SAM port and bidirectional transfer of data between any selected row in the
RAM port and the SAM port. In addition to the conventional multiport DRAM operating
modes, the MSM518122 features the block write and flash write functions on the RAM port and
a split data transfer capability on the SAM port. The SAM port requires no refresh operation
because it uses static CMOS flip-flops.
FEATURES
鈥?Single power supply: 5 V
鹵10%
鈥?Full TTL compatibility
鈥?Multiport organization
RAM: 128K word
樓
8 bits
SAM: 256 word
樓
8 bits
鈥?Fast page mode
鈥?Write per bit
鈥?Masked flash write
鈥?Masked block write
鈥?/div>
RAS
only refresh
鈥?/div>
CAS
before
RAS
refresh
鈥?Hidden refresh
鈥?Serial read/write
鈥?256 tap location
鈥?Bidirectional data transfer
鈥?Split transfer
鈥?Masked write transfer
鈥?Refresh: 512 cycles/8 ms
鈥?Package options:
40-pin 475 mil plastic ZIP (ZIP40-P-475-1.27)
40-pin 400 mil plastic SOJ (SOJ40-P-400-1.27)
(Product : MSM518122-xxZS)
(Product : MSM518122-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM518122-70
MSM518122-80
MSM518122-10
Access Time
RAM
70 ns
80 ns
100 ns
SAM
25 ns
25 ns
25 ns
Cycle Time
RAM
140 ns
150 ns
180 ns
SAM
30 ns
30 ns
30 ns
Power Dissipation
Operating
120 mA
110 mA
100 mA
Standby
8 mA
8 mA
8 mA
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