MSM5116400B Datasheet

IC型號：
MSM5116400B
PDF描述：
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
文件大?。?/label>
72.53KB
PDF頁數(shù)：
8頁
芯片廠家：
OKI

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隆 Semiconductor

MSM5116400B

隆 Semiconductor

4,194,304-Word

樓

4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

MSM5116400B

E2G0033-17-41

DESCRIPTION

The MSM5116400B is a 4,194,304-word

樓

4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

metal CMOS process. The MSM5116400B is available in a 26/24-pin plastic SOJ or 26/24-pin plastic

TSOP.

FEATURES

鈥?4,194,304-word

樓

4-bit configuration

鈥?Single 5 V power supply,

鹵10%

tolerance

鈥?Input

: TTL compatible, low input capacitance

鈥?Output : TTL compatible, 3-state

鈥?Refresh : 4096 cycles/64 ms

鈥?Fast page mode, read modify write capability

鈥?/div>

CAS

before

RAS

refresh, hidden refresh,

RAS-only

refresh capability

鈥?Multi-bit test mode capability

鈥?Package options:

26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5116400B-xxSJ)

26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5116400B-xxTS-K)

(TSOPII26/24-P-300-1.27-L) (Product : MSM5116400B-xxTS-L)

xx indicates speed rank.

PRODUCT FAMILY

Family

MSM5116400B-50

MSM5116400B-60

MSM5116400B-70

Access Time (Max.)

RAC

CAC

OEA

50 ns 25 ns 13 ns 13 ns

60 ns 30 ns 15 ns 15 ns

70 ns 35 ns 20 ns 20 ns

Cycle Time

Power Dissipation

(Min.)

Operating (Max.) Standby (Max.)

90 ns

110 ns

130 ns

550 mW

495 mW

440 mW

5.5 mW

16M

207

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