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MSG43001 Datasheet

  • MSG43001

  • SiGe HBT type For low-noise RF amplifier

  • 4頁(yè)

  • PANASONIC

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Transistors
MSG43001
SiGe HBT type
For low-noise RF amplifier
鈻?/div>
Features
鈥?/div>
Compatible between high breakdown voltage and high cutoff fre-
quency
鈥?/div>
Low-noise, high-gain amplification
鈥?/div>
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm
脳
1.0 mm (height 0.39 mm)
Unit: mm
1
1.00
鹵0.05
0.60
鹵0.05
3
2
0.39
+0.01
鈭?.03
0.15
鹵0.05
0.05
鹵0.03
0.35
鹵0.01
0.25
鹵0.05
0.50
鹵0.05
0.25
鹵0.05
1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
9
6
1
30
100
125
鈭?5
to
+125
Unit
V
V
V
mA
mW
擄C
擄C
3
0.65
鹵0.01
2
0.05
鹵0.03
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Marking Symbol: 3N
Note) *: Copper plate at the collector is 5.0 cm
2
on substrate at 10 mm
脳
12
mm
脳
0.8 mm.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Forward transfer gain
Noise figure
Collector output capacitance
(Common base, input open circuited)
Symbol
I
CBO
I
CEO
I
EBO
h
FE
f
T
錚
21e
錚?/div>
2
NF
C
ob
Conditions
V
CB
=
9 V, I
E
=
0
V
CE
=
6 V, I
B
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
3 mA
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
3 mA, f
=
2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
9.0
100
19
11.0
1.4
0.3
2.0
0.6
Min
Typ
Max
1
1
1
220
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
GHz
dB
dB
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2004
SJC00295BED
1

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