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MSG36E41 Datasheet

  • MSG36E41

  • SiGe HBT type

  • 7頁(yè)

  • PANASONIC

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Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier
鈻?/div>
Features
鈥?/div>
Compatible between high breakdown voltage and high cut-off frequency
鈥?/div>
Low noise, high-gain amplification
鈥?/div>
Two elements incorporated into one package (Each transistor is separated)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
0.12
+0.03
-0.02
6
5
4
Unit: mm
0.80
鹵0.05
1.00
鹵0.04
0 to 0.02
鈥?/div>
MSG33004
+
MSG33001
(0.35) (0.35)
1.00
鹵0.05
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Overall
Total power dissipation
*
Junction temperature
Storage temperature
I
C
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
100
9
6
1
30
125
125
鈭?5
to
+125
mA
V
V
V
Symbol
V
CBO
V
CEO
V
EBO
Rating
9
6
1
Unit
V
V
V
Display at No.1 lead
0.10
鈻?/div>
Basic Part Number
1
2
3
0.10
1: Base (Tr1)
2: Emitter (Tr1)
3: Base (Tr2)
0.37
+0.03
-0.02
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 6D
Internal Connection
6
Tr1
5
4
Tr2
mA
mW
擄C
擄C
1
2
3
Note) *: Copper plate at the collector is 5.0 cm
2
on substrate at 10 mm
脳
12 mm
脳
0.8 mm.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
鈥?/div>
Tr1
Parameter
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
*
Forward transfer gain
*
Noise figure
*
Collector output capacitance
(Common base, input open circuited)
*
Symbol
I
CBO
I
CEO
I
EBO
h
FE
f
T
錚
21e
錚?/div>
2
NF
C
ob
Conditions
V
CB
=
9 V, I
E
=
0
V
CE
=
6 V, I
B
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
15 mA
V
CE
=
3 V, I
C
=
30 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
30 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
15 mA, f
=
2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
6.0
100
17
9.0
1.4
0.6
2.0
0.9
Min
Typ
Max
1
1
1
220
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
GHz
dB
dB
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Verified by random sampling
Publication date: November 2004
SJC00319BED
(0.10)
1

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