MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSD601鈥揜T1/D
NPN General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
MSD601-RT1*
MSD601-ST1
*Motorola Preferred Device
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current 鈥?Peak
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
60
50
7.0
100
200
2
BASE
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
3
2
1
CASE 318D鈥?3, STYLE 1
SC鈥?9
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
200
150
鈥?55 ~ +150
Unit
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C)
Characteristic
Collector鈥揈mitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage (IC = 10
碌Adc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 10
碌Adc,
IC = 0)
Collector鈥揃ase Cutoff Current (VCB = 45 Vdc, IE = 0)
Collector鈥揈mitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc)
Collector鈥揈mitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
MSD601鈥揜T1
MSD601鈥揝T1
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
hFE2
VCE(sat)
Min
50
60
7.0
鈥?/div>
鈥?/div>
210
290
90
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.1
100
340
460
鈥?/div>
0.5
Vdc
Unit
Vdc
Vdc
Vdc
碌Adc
nAdc
鈥?/div>
DEVICE MARKING
Marking Symbol
YR
X
MSD601鈥揜T1
YS
X
MSD601鈥揝T1
The 鈥淴鈥?represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola, Inc. 1996
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1
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