MSD2714AT1
Preferred Device
VHF/UHF Transistor
NPN Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
V
CEO
V
CBO
V
EBO
Max
25
30
3.0
Unit
Vdc
Vdc
Vdc
2
BASE
1
EMITTER
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate, T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈥搕o鈥揂mbient
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
P
D
(Note 2)
R
qJA
T
J
, T
stg
Max
225
1.8
556
300
2.4
625
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
2
3
1
CASE 318D
SC鈥?9
STYLE 1
MARKING DIAGRAM
1. FR鈥? = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina
14A M
14A= Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
MSD2714AT1
Package
SC鈥?9
Shipping
TBD
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2002
1
May, 2002 鈥?Rev. 1
Publication Order Number:
MSD2714AT1/D