鈥?/div>
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
COLLECTOR
3
MSD1819A-RT1
MSD1819A-ST1
Motorola Preferred Devices
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
1
BASE
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
2
3
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current 鈥?Continuous
Collector Current 鈥?Peak
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
60
50
7.0
100
200
CASE 419鈥?2, STYLE 3
SC鈥?0/SOT鈥?23
DEVICE MARKING
MSD1819A-RT1 = ZR
MSD1819A-ST1 = ZS
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
Tstg
Max
150
150
鈥?55 ~ + 150
Unit
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 10
碌A(chǔ)dc,
IE = 0)
Emitter-Base Breakdown Voltage (IE = 10
碌A(chǔ)dc,
IE = 0)
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0)
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc)
Collector-Emitter Saturation Voltage(2)
(IC = 100 mAdc, IB = 10 mAdc)
MSD1819A-RT1
MSD1819A-ST1
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
hFE2
VCE(sat)
Min
50
60
7.0
鈥?/div>
鈥?/div>
210
290
90
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.1
100
340
460
鈥?/div>
0.5
Vdc
Unit
Vdc
Vdc
Vdc
碌A(chǔ)
碌A(chǔ)
鈥?/div>
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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