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MSC83301 Datasheet

  • MSC83301

  • RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICA...

  • 5頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC83301
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
VSWR CAPABILITY
鈭?/div>
:1 @ RATED
CONDITIONS
HERMETIC STRIPAC
廬
PACKAGE
P
OUT
=
1.0 W MIN. WITH 7.0 dB GAIN
@ 3.0 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC83301
BRANDING
83301
PIN CONNECTION
DESCRIPTION
The MSC83301 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geome-
try with a refractory gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated con-
ditions. The MSC83301 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
50擄C)
6.0
200
30
200
鈭?/div>
65 to +200
W
mA
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
25
擄
C/W
*Applies only to rated RF amplifier operation
September 2, 1994
1/5

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