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MSC82307 Datasheet

  • MSC82307

  • RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICA...

  • 54.45KB

  • 3頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC82307
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
.
.
.
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
HERMETIC STRIPAC
廬
PACKAGE
P
OUT
=
7.0 W MIN. WITH 9.6 dB GAIN
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82307
BRANDING
82307
PIN CONNECTION
DESCRIPTION
The MSC82307 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82307 was designed for Class C ampli-
fier/oscillator applications in the 1.5 - 2.3 GHz fre-
quency range.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
50藲C)
21.4
1.2
26
200
鈭?/div>
65 to +200
W
A
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
7.0
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/3

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