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MSC82306 Datasheet

  • MSC82306

  • RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICA...

  • 57.40KB

  • 4頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC82306
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
.
.
.
PRELIMINARY DATA
REFRACTORY\GOLD METALLIZATION
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
HERMETIC STRIPAC
廬
PACKAGE
P
OUT
=
5.5 W MIN. WITH 9.6 dB GAIN
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82306
BRANDING
82306
PIN CONNECTION
DESCRIPTION
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
50擄C)
16.7
900
26
200
鈭?/div>
65 to +200
W
mA
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
9.0
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/4

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