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MSC82040 Datasheet

  • MSC82040

  • RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIO...

  • 139.02KB

  • 6頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC82040
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
.
.
.
.
.
.
.
EMITTER BALLASTED
CLASS A LINEAR OPERATION
COMMON EMITTER
VSWR CAPABILITY
鈭?/div>
:1 @ RATED
CONDITIONS
ft 1.6 GHz TYPICAL
NOISE FIGURE 15.5 dB @ 2 GHz
P
OUT
=
27 dBm MIN. @ 1.0 GHz
.230 4L STUD (S027)
hermetically sealed
ORDER CODE
MSC82040
BRANDING
82040
PIN CONNECTION
DESCRIPTION
The MSC82040 is a hermetically sealed NPN
power transistor with a fishbone, emitter finger
ballasted geometry utilizing a refractory/gold me-
tallization system. The device is designed speci-
fically for Class A linear applications to provide
high gain and high output power at the 1.0 dB
compression point.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
4. Emitter
P
DISS
I
C
V
CE
T
J
T
STG
Power Dissipation
Device Bias Current
(see Safe Area)
鈥?/div>
200
20
200
鈭?/div>
65 to +200
W
mA
V
擄
C
擄
C
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
20
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/6

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