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MSC82001 Datasheet

  • MSC82001

  • RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICA...

  • 95.95KB

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC82001
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
.
.
.
.
EMITTER BALLASTED
REFRACTORY/GOLD METALLIZATION
VSWR CAPABILITY
鈭?/div>
:1 @ RATED
CONDITIONS
HERMETIC STRIPAC
廬
PACKAGE
P
OUT
=
1.0 W MIN. WITH 7.0 dB GAIN
@ 2.0 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82001
BRANDING
82001
PIN CONNECTION
DESCRIPTION
The MSC82001 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82001 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
7.0
200
35
200
鈭?/div>
65 to +200
W
mA
V
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
20
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/5

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