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MSC81450M Datasheet

  • MSC81450M

  • RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

  • 3頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC81450M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
.
.
.
.
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REFRACTORY\GOLD METALLIZATION
RUGGEDIZED VSWR 25:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
450 W MIN. WITH 7.0 dB GAIN
.400 x .500 2LF L (S038)
hermetically sealed
ORDER CODE
MSC81450M
BRANDING
81450M
PIN CONNECTION
DESCRIPTION
The MSC81450M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
25:1 load mismatch at any phase angle under full
rated conditions.
The MSC81450M is housed in the unique BIG-
PAC鈩?package with internal input/output match-
ing structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
910
28
55
250
鈭?/div>
65 to +200
W
A
V
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
0.15
擄
C/W
*Applies only to rated RF amplifier operation

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