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MSC81400M Datasheet

  • MSC81400M

  • RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

  • 3頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC81400M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
.
.
.
.
.
REFRACTORY\GOLD METALLIZATION
RUGGEDIZED VSWR 25:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
400 W MIN. WITH 6.5 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
MSC81400M
BRANDING
81400M
PIN CONNECTION
DESCRIPTION
The MSC81400M "Super Power" transistor is a
high peak pulse power device specifically de-
signed for DME/TACAN avionics applications.
This device is capable of withstanding a minimum
25:1 load mismatch condition at any phase angle
under full rated conditions.
The MSC81400M is housed in the unique BIG-
PAC鈩?hermetic metal/ceramic package with inter-
nal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
80藲C)
1000
28
55
250
鈭?/div>
65 to +200
W
A
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
0.12
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/3

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