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MSC81350M Datasheet

  • MSC81350M

  • RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC81350M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
RUGGEDIZED VSWR 20:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
350 W MIN. WITH 7.0 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
MSC81350M
BRANDING
81350M
PIN CONNECTION
DESCRIPTION
The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81350M is housed in the unique
AMPAC鈩?package with internal input/output
matching structures.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
55擄C)
720
19.8
55
250
鈭?/div>
65 to +200
W
A
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
0.20
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/5

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