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MSC81325M Datasheet

  • MSC81325M

  • RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

  • 3頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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MSC81325M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
.
.
.
.
.
.
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION
EMITTER BALLASTED
RUGGEDIZED VSWR
鈭?/div>
:1
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
325 W MIN. WITH 6.7 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
MSC81325M
BRANDING
81325M
PIN CONNECTION
DESCRIPTION
The MSC81325M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding an infinite
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high relia-
bility and product consistency.
The MSC81325M is housed in the industry-stand-
ard AMPAC鈩?metal/ceramic hermetic package
with internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
100藲C)
880
24
55
250
鈭?/div>
65 to +200
W
A
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
0.17
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/3

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