.
.
.
.
.
.
.
.
鈭?/div>
:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
35 W MIN. WITH 10.7 dB GAIN
.280 2LFL (S068)
epoxy sealed
ORDER CODE
MSC81035M
BRANDING
81035M
PIN CONNECTION
DESCRIPTION
The MSC81035M is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035M. MSC81035M of-
fers improved saturated ouput power and collec-
tor efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high reli-
ability and product consistency.
The MSC81035M is housed in the IMPAC鈩?/div>
package with internal input matching.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
100擄C)
150
3.0
55
250
鈭?/div>
65 to +200
W
A
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
1.0
擄
C/W
*Applies only to rated RF amplifier operation
Note:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
September 2, 1994
1/4
next