.
.
.
.
.
.
.
.
鈭?/div>
:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
35 W MIN. WITH 10.7 dB GAIN
.280 4LSL (S051)
epoxy sealed
ORDER CODE
MSC81035MP
BRANDING
81035MP
PIN CONNECTION
DESCRIPTION
The MSC81035MP is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035MP. MSC81035MP of-
fers improved saturated ouput power and collector
efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized auto-
matic wire bonding techniques ensure high relia-
bility and product consistency.
The MSC81035MP is housed in the IMPAC鈩?pack-
age with internal input matching.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
100擄C)
150
3.0
55
250
鈭?/div>
65 to +150
W
A
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
1.0
擄
C/W
*Applies only to rated RF amplifier operation
Note:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
October 1992
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STMICROELECTRONICS
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