MSC80195
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
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.
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EMITTER BALLASTED
CLASS A LINEAR OPERATION
COMMON EMITTER
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
ft 3.2 GHz TYPICAL
NOISE FIGURE 12.0 dB @ 2 GHz
P
OUT
=
28 dBm MIN. @ 2.0 GHz
.250 2LFL (S011)
hermetically sealed
ORDER CODE
MSC80195
BRANDING
80195
PIN CONNECTION
DESCRIPTION
The MSC80195 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Baser
4. Emitter
P
DISS
I
C
V
CE
T
J
T
STG
Power Dissipation
Device Bias Current
(see Safe Area)
鈥?/div>
300
20
200
鈭?/div>
65 to +200
W
mA
V
擄
C
擄
C
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
35
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/6
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