MSC80186
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
.
.
.
.
.
.
.
EMITTER BALLASTED
CLASS A LINEAR OPERATION
COMMON EMITTER
VSWR CAPABILITY 15:1 @ RATED
CONDITIONS
ft 3.2 GHz TYPICAL
NOISE FIGURE 12.5 dB @ 2 GHz
P
OUT
=
30.0 dBm MIN.
.230 4L STUD (S027)
hermetically sealed
ORDER CODE
MSC80186
BRANDING
80186
PIN CONNECTION
DESCRIPTION
The MSC80185 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
4. Emitter
P
DISS
I
C
V
CE
T
J
T
STG
Power Dissipation
Device Bias Current
(see Safe Area)
鈥?/div>
500
20
200
鈭?/div>
65 to +200
W
mA
V
擄
C
擄
C
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
17
擄
C/W
*Applies only to rated RF amplifier operation
October 1992
1/6
next