MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSC3130T1/D
NPN RF Amplifier Transistor
Surface Mount
MSC3130T1
Motorola Preferred Device
COLLECTOR
3
3
2
1
2
BASE
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318D鈥?3, STYLE 1
SC鈥?9
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
VCBO
VCEO
VEBO
IC
Value
15
10
3.0
50
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
200
150
鈥?55 ~ +150
Unit
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C)
Characteristic
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
DC Current Gain(1)
(VCE = 4.0 Vdc, IC = 5.0 mAdc)
Collector鈥揈mitter Saturation Voltage
(IC = 20 mAdc, IB = 4.0 mAdc)
Current鈥揋ain 鈥?Bandwidth Product
(VCB = 4.0 Vdc, IE = 鈥?.0 mAdc)
1. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
Symbol
ICBO
VCEO
VEBO
hFE
VCE(sat)
fT
Min
鈥?/div>
10
3.0
75
鈥?/div>
1.4
Max
1.0
鈥?/div>
鈥?/div>
400
0.5
2.5
Unit
碌A(chǔ)dc
Vdc
Vdc
鈥?/div>
Vdc
GHz
DEVICE MARKING
Marking Symbol
1S
X
The 鈥淴鈥?represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola, Inc. 1996
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1
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