鈥?/div>
1025 鈥?1150 MHz
50 VOLTS
INTERNAL INPUT/OUTPUT MATCHING
P
OUT
= 175 WATTS
G
P
= 7.7 dB MINIMUM
COMMON BASE CONFIGURATION
DESCRIPTION:
The MSC1175M is a NPN bipolar transistor specifically designed for
high peak pulse power applications such as DME/TACAN.
This device is capable of withstanding a minimum 20:1 load
VSWR at any phase angle under full rated conditions. Internal
impedance matching provides consistent broadband performance.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25擄 C)
擄
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Power Dissipation
Device Current
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
Value
400
12
55
250
-65 to +200
Unit
W
A
V
擄
C
擄
C
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
0.3
擄
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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