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MSC1150M

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI MSC1150M

is Designed for

Class C, DME/TACAN Applications

up to 1150 MHz.

PACKAGE STYLE .400 2NL FLG

A

.0 2 5 x 4 5 擄

2X B

C

F

脴D

E

4 x .0 6 2 x 4 5 擄

FEATURES:

鈥?/div>

Internal Input/Output Matching Networks

鈥?/div>

P

G

= 7.8 dB at 150 W/1150 MHz

鈥?/div>

Omnigold鈩?/div>

Metalization System

G

H

I

J

K

P

M

D IM

A

M IN IM U M

inches / m m

L

N

M A X IM U M

inches / m m

.0 2 0 / 0 .5 1

.1 0 0 / 2 .5 4

.3 7 6 / 9 .5 5

.1 1 0 / 2 .7 9

.3 9 5 / 1 0 .0 3

.1 9 3 / 4 .9 0

.4 5 0 / 1 1 .4 3

.1 2 5 / 3 .1 8

.6 4 0 / 1 6 .2 6

.8 9 0 / 2 2 .6 1

.3 9 5 / 1 0 .0 3

.0 0 4 / 0 .1 0

.0 5 2 / 1 .3 2

.1 1 8 / 3 .0 0

.0 3 0 / 0 .7 6

MAXIMUM RATINGS

I

C

V

CC

P

DISS

T

J

T

STG

胃

JC

11 A

55 V

400 W @ T

C

= 25 擄C

-65 擄C to +250 擄C

-65 擄C to +200 擄C

0.3 擄C/W

B

C

D

E

F

G

H

I

J

K

L

M

N

P

.3 9 6 / 1 0 .0 6

.1 3 0 / 3 .3 0

.4 0 7 / 1 0 .3 4

.6 6 0 / 1 6 .7 6

.9 1 0 / 2 3 .1 1

.4 1 5 / 1 0 .5 4

.0 0 7 / 0 .1 8

.0 7 2 / 1 .8 3

.1 3 1 / 3 .3 3

.2 3 0 / 5 .8 4

CHARACTERISTICS

SYMBOL

BV

CBO

BV

CER

BV

EBO

I

CES

h

FE

C

ob

P

G

畏

C

I

C

= 10 mA

I

C

= 15 mA

I

E

= 1.0 mA

V

CE

= 50 V

V

CE

= 5.0 V

V

CB

= 28 V

V

CC

= 50 V

T

C

= 25 擄C

NONETEST

CONDITIONS

R

BE

= 10

鈩?/div>

MINIMUM TYPICAL MAXIMUM

65

3.5

12.5

UNITS

V

mA

---

pF

dB

%

I

C

= 1.0 A

f = 1.0 MHz

P

OUT

= 150 W

f = 1025 - 1150 MHz

15

120

80

7.8

40

8.3

42

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

鈥?/div>

NORTH HOLLYWOOD, CA 91605

鈥?/div>

(818) 982-1200

鈥?/div>

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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