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MSC1020

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI MSC1020

is Designed for

General Purpose Class C Power

Amplifier Applications up to 1.2 GHz.

PACKAGE STYLE .250 2L FLG

A

脴D

C

E

.060 x 45擄

CHAMFER

B

FEATURES:

鈥?/div>

P

G

= 10 dB min. at 20 W/ 1.0 GHz

鈥?/div>

Hermetic Microstrip Package

鈥?/div>

Omnigold鈩?/div>

Metalization System

鈥?/div>

Emitter Ballasted

G

L

H

J

F

I

K

M

NP

DIM

A

B

MINIMUM

inches / mm

MAXIMUM

inches / mm

.028 / 0.71

.740 / 18.80

.245 / 6.22

.128 / 3.25

.125 / 3.18

.110 / 2.79

.117 / 2.97

.560 / 14.22

.790 / 20.07

.225 / 5.72

.165 / 4.19

.003 / 0.08

.058 / 1.47

.119 / 3.02

.149 / 3.78

.032 / 0.81

.255 / 6.48

.132 / 3.35

.117 / 2.97

.570 / 14.48

.810 / 20.57

.235 / 5.97

.185 / 4.70

.007 / 0.18

.068 / 1.73

.135 / 3.43

.187 / 4.75

MAXIMUM RATINGS

I

C

V

CC

P

DISS

T

J

T

STG

胃

JC

1.5 A

35 V

35 W @ T

C

= 25 擄C

-65 擄C to +200 擄C

5.0 擄C/W

C

D

E

F

G

H

I

J

K

L

M

N

P

COMMON BASE

CHARACTERISTICS

SYMBOL

BV

CBO

BV

CER

BV

EBO

I

CBO

h

FE

C

ob

P

G

畏

C

I

C

= 15 mA

I

E

= 1.0 mA

V

CB

= 28 V

V

CE

= 5.0 V

V

CB

= 28 V

T

C

= 25 擄C

NONETEST

CONDITIONS

I

C

= 5.0 mA

R

BE

= 10

鈩?/div>

MINIMUM TYPICAL MAXIMUM

45

3.5

5.0

UNITS

V

mA

---

pF

dB

%

I

C

= 1.0 A

f = 1.0 MHz

P

OUT

= 20 W

f = 1.0 GHz

15

120

19

V

CC

= 28 V

P

I N

= 2.0 W

10

55

10.2

58

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

鈥?/div>

NORTH HOLLYWOOD, CA 91605

鈥?/div>

(818) 982-1200

鈥?/div>

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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