applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
鈥?/div>
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MSB92WT1
Motorola Preferred Devices
PNP GENERAL PURPOSE
HIGH VOLTAGE
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current 鈥?Continuous
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
鈥?00
鈥?00
鈥?.0
150
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 419鈥?2, STYLE 3
SC鈥?0/SOT鈥?23
DEVICE MARKING
MSB92WT1 = H2D
COLLECTOR
3
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
Tstg
Max
150
150
鈥?55 ~ + 150
Unit
mW
擄C
擄C
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (IC = 鈥?.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 鈥?00
碌A(chǔ)dc,
IE = 0)
Emitter-Base Breakdown Voltage (IE = 鈥?00
碌A(chǔ)dc,
IE = 0)
Collector-Base Cutoff Current (VCB = 鈥?00 Vdc, IE = 0)
Emitter鈥揃ase Cutoff Current (VEB = 鈥?.0 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 鈥?0 Vdc, IC = 鈥?.0 mAdc)
(VCE = 鈥?0 Vdc, IC = 鈥?0 mAdc)
Collector-Emitter Saturation Voltage(2) (IC = 鈥?00 mAdc, IB = 鈥?.0 mAdc)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
Min
鈥?00
鈥?00
鈥?.0
鈥?/div>
鈥?/div>
25
40
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.1
鈥?.1
鈥?/div>
鈥?/div>
鈥?.5
Vdc
Unit
Vdc
Vdc
Vdc
碌A(chǔ)
碌A(chǔ)
鈥?/div>
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
next
MSB92WT1 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
500mA
300V
500mV @ 2mA,20mA
-
120 @ 1mA,10V
150mW
50MHz
表面貼裝
SC-70,SOT-323
SC-70-3(SOT323)
帶卷 (TR)
MSB92WT1OS
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