MSB92ASWT1
Preferred Device
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Electrostatic Discharge
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
ESD
Value
-300
-300
-5.0
500
MBMu16,000,
MMu2,000
Unit
Vdc
Vdc
Vdc
mAdc
V
3
SC-70/SOT-323
CASE 419
STYLE 3
2
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1.)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
- 55 ~ + 150
Unit
mW
擄C
擄C
1
MARKING DIAGRAM
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
D3 M
D3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
MSB92ASWT1
Package
SC-70/
SOT-323
Shipping
8mm Tape & Reel
(7-inch/3000 Unit)
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2003
1
May, 2003 - Rev. 0
Publication Order Number:
MSB92ASWT1/D