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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MSB710鈥換T1/D

PNP General Purpose Amplifier

Transistors Surface Mount

COLLECTOR

3

MSB710-QT1

MSB710-RT1*

*Motorola Preferred Device

3

2

1

2

BASE

1

EMITTER

CASE 318D鈥?3, STYLE 1

SC鈥?9

MAXIMUM RATINGS

(TA = 25擄C)

Rating

Collector鈥揃ase Voltage

Collector鈥揈mitter Voltage

Emitter鈥揃ase Voltage

Collector Current 鈥?Continuous

Collector Current 鈥?Peak

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC

IC(P)

Value

鈥?60

鈥?50

鈥?7.0

鈥?500

鈥?.0

Unit

Vdc

Vdc

Vdc

mAdc

Adc

THERMAL CHARACTERISTICS

Characteristic

Power Dissipation

Junction Temperature

Storage Temperature

Symbol

PD

TJ

Tstg

Max

200

150

鈥?55 ~ +150

Unit

mW

擄C

擄C

DEVICE MARKING

Marking Symbol

CQ

X

MSB710鈥換T1

CR

X

MSB710鈥揜T1

The 鈥淴鈥?represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

Thermal Clad is a trademark of the Bergquist Company

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

漏

Motorola, Inc. 1996

Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data

1

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