鈥?/div>
Tungsten schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, MSASC100W100H)
and reverse polarity (strap-to-cathode: MSASC100W100HR)
100 Volts
100 Amps
LOW LEAKAGE
SCHOTTKY DIODE
Maximum Ratings @ 25擄C (unless otherwise specified)
擄
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc鈮?135擄C
derating, forward current, Tc鈮?135擄C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1碌s, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
MSASC100W100H
SYMBOL
V
RRM
V
RWM
V
R
I
F(ave)
dI
F
/dT
I
FSM
I
RRM
T
j
T
stg
胃
JC
MAX.
100
100
100
100
2.5
500
2
-65 to +175
-65 to +175
0.35
0.5
UNIT
Volts
Volts
Volts
Amps
Amps/擄C
Amps
Amp
擄C
擄C
擄C/W
Mechanical Outline
Datasheet# MSC0306A