鈥?/div>
Oxide passivated structure for very low leakage currents
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
available with TXV (MSARW80G20AV) or S-level (MSARW80G20AS)
screening i.a.w. Microsemi internal procedure PS11.50
Maximum Ratings @ 25擄C (unless otherwise specified)
擄
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc鈮?135擄C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
SYMBOL
V
RRM
V
RWM
V
R
I
F(ave)
I
FSM
T
j
T
stg
胃
JC
MAX.
200
200
200
80
250
-65 to +200
-65 to +200
0.8
(typ.0.35)
UNIT
Volts
Volts
Volts
Amps
Amps
擄C
擄C
擄C/W
Mechanical Outline
Datasheet# MSC1459.pdf rev1
June, 2000
1
2
