鈥?/div>
passivated mesa structure for very low leakage currents
Epitaxial structure minimizes forward voltage drop
Low profile plastic surface mount package with CTE matched base
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, MSARS200S20LP) and
reverse polarity (strap-to-cathode: MSARS200S20LRP)
Maximum Ratings @ 25擄C (unless otherwise specified)
擄
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc鈮?125擄C
derating, forward current, Tc鈮?125擄C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
SYMBOL
V
RRM
V
RWM
V
R
I
F(ave)
dI
F
/dT
I
FSM
T
j
T
stg
胃
JC
Mechanical Outline
Plastic ThinKey鈩?
Molybdenum pad with Ni
plating and Sn63 solder finish
Cu/Invar/Cu
strap with Ni
plating and
Sn63 solder
finish on foot
Datasheet# MSC1363