High Freq. Switching to 20KHz
鈥?/div>
Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix
35-50% of
I
CM
Max
10碌s
4000碌s
MAXIMUM RATINGS:
SYMBOL
V
CES
V
CGR
V
EG
V
GE
I
C1
I
C2
I
CM
I
CM1
I
CM2
I
Csurge2
E
AS
P
D
T
J,
T
STG
Time -
碌sec
PARAMETER
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K鈩?)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25擄
C
Continuous Collector Current @ T
C
= 110擄
C
Surge Current (10碌s x 4ms double exponential, see figure 2)
Pulsed Collector Current
盧
@ T
C
= 25擄
C
Pulsed Collector Current
盧
@ T
C
= 110擄
C
Surge Current: tp= 2 us (ton= 1.5
碌s;
toff= 0.5
碌s
to 50% decay), 10 pulses, duty
cycle= 1:2,500,000 (12 pulses/minute)
Single Pulse Avalanche Energy
-
Total Power Dissipation
Operating and Storage: Junction Temperature Range
VALUE
1200
1200
15
鹵20
22
11
55
44
22
400
10
125
-55 to 150
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Amps
Amps
Apk
mJ
Watts
擄
C
STATIC ELECTRICAL CHARACTERISTICS:
SYMBOL
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
CHARACTERISTIC / TEST CONDITIONS
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Collector-Emitter Reverse Breakdown Voltage
廬
(V
GE
= 20V, I
C
= 10mA)
Gate Threshold Voltage (V
CE
=
V
GE
,
I
C
=
350碌A(chǔ), T
J
= 37擄
C
Gate Threshold Voltage (V
CE
=
V
GE
,
I
C
=
350碌A(chǔ), T
J
= 25擄
C
Collector-Emitter On Voltage (V
GE
=
15V, I
C
=
I
C2,
T
J
=
25擄
C)
Collector-Emitter On Voltage (V
GE
=
15V, I
C
=
I
C2,
T
J
= 37
擄
C)
Collector-Emitter On Voltage (V
GE
=
15V, I
C
=
I
C2,
T
J
= 1
25擄
C)
I
CES
Collector Cut-off Current (V
CE
= 80%V
CES
,
V
GE
= 0V,
T
J
=
25擄
C)
Collector Cut-off Current (V
CE
= 80%V
CES
,
V
GE
= 0V,
T
J
= 37
擄
C)
Collector Cut-off Current (V
CE
= 80%V
CES
,
V
GE
= 0V,
T
J
= 1
25擄
C)
Gate-Emitter Leakage Current (V
GE
= 鹵25V,
V
CE
=0V)
I
GES
Gate-Emitter Leakage Current (V
GE
= 鹵25V,
V
CE
=0V), Tj= 37擄
C
2
4
4.5
MIN
1200
-15
5.7
5.5
3.1
3.5
4
0.02
0.07
1000
鹵100
4.5
10
6.5
3.5
TYP
MAX
UNIT
Volts
Volts
Volts
Volts
Volts
Volts
Volts
uA
uA
uA
nA
nA
MSC0947.PDF 2/5/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T
C
= 25擄 unless otherwise specified
C
1
2
3
