鈩?/div>
Gain Block
鈥?3 dB Bandwidth:
DC to 2.8 GHz
鈥?12.0 dB Typical Gain at
1.0 GHz
鈥?Unconditionally Stable
(k>1)
The MSA-series is fabricated using
HP鈥檚 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400擄C and either wedge
or ball bonding using 0.7 mil gold
wire.
[1]
See APPLICATIONS
section, 鈥淐hip Use鈥?
Chip Outline
[1]
Description
The MSA-0200 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50
鈩?/div>
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section 鈥淪ilicon MMIC Chip Use鈥?for
additional information.
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
C
block
IN
MSA
C
block
OUT
V
d
= 5 V
5965-9695E
6-266
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