MS2575
RF PRODUCTS
DIVISION
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
DESCRIPTION
KEY FEATURES
W W W.
Microsemi
.COM
The MS2575 is a medium power Class C transistor designed
specifically for pulsed L-Band avionics applications.
Low RF thermal resistance and computerized automatic wire bonding
techniques ensure high reliability and product consistency.
The MS2575 is housed in the IMPAC餂?package with internal input
matching.
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Refractory/Gold
Metallization
Emitter Site Ballasted
鈭?/div>
:1 VSWR Capability
Low Thermal
Resistance
Input Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
P
OUT
= 35 W Min.
G
P
= 10.7 dB Gain
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Avionics Applications
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Power Dissipation (T
C
鈮?/div>
100擄C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
Value
150
3.0
55
250
-65 to +150
Unit
W
A
V
擄C
擄C
R
TH(j-c)
Note:
Junction-Case Thermal Resistance
1.0
擄C/W
Applies only to rated RF amplifier operation
Thermal Resistance determined by Infra-Red Scanning of Hot Spot
Junction Temperature at rated RF operating conditions.
PIN CONNECTION
1
MS2575
MS2575
4
3
2
1. COLLECTOR 3. EMITTER
2. BASE
4. BASE
Copyright
錚?/div>
2000
MSC1666.PDF 2001-01-24
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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