MS2552
RF PRODUCTS
DIVISION
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
DESCRIPTION
KEY FEATURES
W W W.
Microsemi
.COM
The MS2552 device is a high power pulsed transistor specifically
designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase
angle under full rated conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high reliability and product
consistency.
The MS2552 is housed in the industry-standard AMPAC餂?metal/ceramic
hermetic package with internal input/output matching structures.
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Refractory/Gold
Metallization
Emitter Ballasted
Ruggedized VSWR
鈭?/div>
:1
Capability
Input/Output Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
P
OUT
= 325 W Min.
G
P
= 6.7 dB Gain
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Avionics Applications
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Power Dissipation* (T
C
鈮?/div>
100擄C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Value
880
24
55
250
-65 to +150
Unit
W
A
V
擄C
擄C
R
TH(j-c)
Junction-Case Thermal Resistance
0.17
擄C/W
Applies only to rated RF amplifier operation
MS2552
MS2552
Copyright
錚?/div>
2000
MSC1665.PDF 2001-01-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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