MS2393
RF PRODUCTS
DIVISION
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
DESCRIPTION
KEY FEATURES
W W W.
Microsemi
.COM
The MS2393 is a gold metallized, silicon NPN power transistor.
The MS2393 is designed for applications requiring high peak power
and low duty cycles such as IFF, DME and TACAN. The MS2393 is
packaged in a metal/ceramic package with internal input/output
matching, resulting in improved broadband performance and low
thermal resistance.
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Symbol
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
65
65
3.5
11
583
+200
-65 to +150
Unit
V
V
V
A
W
擄C
擄C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
0.30
擄C/W
Designed For High
Power Pulse IFF, DME,
and TACAN
Applications
200 W (typ.) IFF 1030 鈥?/div>
1090 MHz
150 W (min.) DME 1025
鈥?1150 MHz
140 W (typ.) TACAN
960 鈥?1215 MHz
8.2 dB Gain
Refractory Gold
Metallization
Ballasting And Low
Thermal Resistance For
Reliability And
Ruggedness
30:1 Load VSWR
Capability At Specified
Operating Conditions
Input And Output
Matched Common Base
Configuration
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Avionics Applications
MS2393
MS2393
Copyright
錚?/div>
2000
MSC1660.PDF 2001-01-30
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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