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MS2213 Datasheet

  • MS2213

  • RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICA...

  • 155.01KB

  • 3頁

  • MICROSEMI

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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2213
RF & MICROWAVE TRANSISTORS
SPECIALITY AVIONICS/JTIDS APPLICATIONS
Features
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
15:1 VSWR CAPABILITY
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
= 30 W MIN. WITH 7.8 dB Gain
DESCRIPTION:
The MS2213 device is a high power Class C transistor specifically
designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse
widths, duty cycles and temperatures and is capable of
withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire
bonding techniques ensure high reliability and product
consistency.
The MS2213 is supplied in the hermetic metal/ceramic package
with internal input matching structures.
A
BSOLUTE MAXIMUM RATINGS
(Tcase = 25擄C)
擄
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation *
(T
C
鈮?/div>
85擄C)
擄
Device Current *
Collector - Supply Voltage *
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Parameter
Value
75
3.5
40
250
- 65 to + 200
Unit
W
A
V
擄
C
擄
C
Thermal Data
R
TH(j-c)
Junction-Case Thermal Resistance
2.2
擄
C/W
* Applies only to rated RF amplifier operation
MSC0920.PDF 9-23-98

MS2213 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • -

  • 散裝

  • 停產(chǎn)

  • NPN

  • 55V

  • 960MHz ~ 1.215GHz

  • -

  • 7.8dB

  • 75W

  • 15 @ 1A，5V

  • 3.5A

  • 250°C（TJ）

  • 底座安裝

  • M214

  • M214

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