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MS2210 Datasheet

  • MS2210

  • RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

  • 3頁

  • ADPOW

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MS2210
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
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255 MHz BANDWIDTH
GOLD METALLIZATION
EMITTER SITE BALLASTED
Pout = 300W MINIMUM
Gp = 7.0 dB
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
15:1 VSWR CAPABILITY
DESCRIPTION:
The MS2210 avionics power transistor is a broadband, high peak
pulse power device specifically designed for avionics applications
requiring broad bandwidth with moderate duty cycle and pulse width
constraints such as ground/ship DME/TACAN. The MS2210 is also
designed for specialized applications where reduced power is
provided under pulse formats utilizing short pulse widths and high
burst or overall duty cycles
This device is capable of withstanding 15:1 VSWR mismatch load
conditions at any phase angle under full rated conditions.
ABSOLUTE MAXIMUM RATINGS
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
(Tcase = 25擄 C)
擄
Value
940
24
50
+200
- 65 to + 200
Parameter
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
Unit
W
A
擄
C
擄
C
Thermal Data
R
TH(j-c)
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Junction-Case Thermal Resistance*
0.16
擄
C/W
Applies only to rated RF operation.
MS2210.PDF 4-15-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.

MS2210 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • -

  • 散裝

  • 停產(chǎn)

  • NPN

  • 65V

  • 960MHz ~ 1.215GHz

  • -

  • 7dB

  • 940W

  • 10 @ 5A，5V

  • 24A

  • 200°C（TJ）

  • 底座安裝

  • M216

  • M216

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