鈥?/div>
HERMETIC METAL/CERAMIC PACKAGE
LOW THERMAL RESISTANCE
10:1 LOAD VSWR CAPABILITY
BALLASTED OVERLAY GEOMETRY
COMMON EMITTER CONFIGURATION
DESCRIPTION:
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR
SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS
INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS
CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE
WIDTHS, DUTY CYCLES AND TEMPERATURES.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25擄C)
擄
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Power Dissipation* (T
C
鈮?/div>
100潞C)
Device Current *
Collector Supply Voltage*
Junction Temperature
Storage Temperature
Value
1360
27
55
250
-65 to +200
Unit
W
A
V
擄
C
擄
C
Thermal Data
R
TH(J-C)
Junction - Case Thermal Resistance
*Applies only to rated RF amplifier operation
0.11
擄
C/W
MSC0926.PDF 10-09-98
next