W W W .
transistor designed primarily for broadband applications in the 450 鈥?/div>
512 MHz land mobile radio band. This device utilizes diffused emitter
resistors to withstand infinite VSWR at rated operating conditions
.
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
470
!"
MHz
12.5 Volts
!"
Efficiency 55%
!"
Common Emitter
!"
P
!"
OUT
= 38 W Min.
G
!"
P
= 5.8 dB Gain
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
UHF Mobile
!"
Applications
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
36
16
4.0
8.0
117
+200
-65 to +150
Unit
V
V
V
A
W
擄C
擄C
.500 6LFL (M111)
EPOXY SEALED
THERMAL DATA
4 1
1.5
擄C/W
R
TH(j-c)
Junction-Case Thermal Resistance
MS1510
MS1510
2 3
Copyright
錚?/div>
2000
MSC1627.PDF 2000-12-03
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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