鈥?/div>
30 MHz
28 VOLTS
IMD = -28 dB
P
OUT
= 30 WATTS
G
P
= 18 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
65
36
4.0
4.5
80
+200
-65 to +150
Unit
V
V
V
A
W
擄
C
擄
C
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
2.2
擄
C/W
MSC0943.PDF 10-28-98