鈥?/div>
30 MHz
50 VOLTS
P
OUT
= 220 W
G
P
= 13 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1079 is a 50 V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25擄C)
擄
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Value
110
55
4.0
12
320
+200
-65 to +150
Unit
V
V
V
A
W
擄
C
擄
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
0.7
擄
C/W
053-7052 Rev - 10-2002