鈥?/div>
Diffused Ballast Resistors
MRW54001
10 鈥?11 dB
1.0 鈥?4.0 GHz
0.5 WATT
MICROWAVE LINEAR
POWER TRANSISTORS
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCES
VEBO
TJ
Tstg
Value
22
50
3.5
200
鈥?65 to + 200
Unit
Vdc
Vdc
Vdc
擄C
擄C
CASE 400鈥?1, STYLE 1
(TW200)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
40
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mA, VBE = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 1.0 mA, IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 0.25 mA, IC = 0)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
22
50
45
3.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.25
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
hFE
20
鈥?/div>
120
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
REV 1
Cob
鈥?/div>
鈥?/div>
3.5
pF
(continued)
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRW54001
2鈥?
MRW54001相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
-
英文版
MICROWAVE LINEAR POWER TRANSISTORS
-
英文版
MICROWAVE LINEAR POWER TRANSISTORS
MOTOROLA [...
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