MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC1805/D
The MRFIC Line
1.9 GHz GaAs Power Amplifier
This two鈥搒tage class AB monolithic GaAs amplifier in a low鈥揷ost 16 lead
plastic package is designed for output or driver applications in 1.9 GHz PCS
handsets and basestations. The design is optimized for 3.0 Volt operation in
systems such as Japan鈥檚 PHS, Europe鈥檚 DECT and the emerging North
American PCS services. With modifications to the simple off鈥揷hip matching, the
device can be used in other applications from 1.5 to 2.5 GHz.
鈥?/div>
High Output Capability = 27 dBm Typical Psat
21.5 dBm Typical with PHS Format
鈥?/div>
High Gain = 21 dB Typical Small Signal, 20 dB at Pout = 22 dBm
鈥?/div>
Low Current Drain = 170 mA Typical with PHS Format
250 mA Typical with DECT Format
鈥?/div>
Low鈥揅ost, Low Profile Plastic TSSOP Package
鈥?/div>
Order MRFIC1805R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
鈥?/div>
Device Marking = M1805
CASE 948C鈥?3
(TSSOP鈥?6)
MRFIC1805
1.9 GHz
POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
(TA = 25
_
C unless otherwise noted)
Ratings
Supply Voltage
Supply Voltage
RF Input Power
Drain Current
Thermal Resistance, Junction to Air
Operating Junction Temperature
Ambient Operating Temperature
Storage Temperature
Symbol
VDD, VD1,
VD2
VSS
RFin
IDD
R
胃JA
TJ
TA
Tstg
Value
6
鈥?
+10
500
240
+175
鈥?0 to +85
鈥?5 to +125
Unit
Vdc
Vdc
dBm
mA
/W
_
C
_
C
_
C
PCNTRL GND
16
15
VD1
14
GND
13
GND
12
RF OUT/ RF OUT/
VD2
VD2
11
10
N/C
9
GATE
BIAS
1
VSS
2
GND
3
GND
4
GND
5
GND
6
GND
7
RF IN
8
N/C
Pin Connections and Functional Block Diagram
REV 1
漏
Motorola, Inc. 1997
MOTOROLA RF DEVICE DATA
MRFIC1805
1
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