MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC0913/D
The MRFIC Line
900 MHz GaAs Integrated
Power Amplifier
This integrated circuit is intended for GSM class IV handsets. The device is
specified for 2.8 watts output power and 48% minimum power added efficiency
under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior
performance, Motorola鈥檚 planar GaAs MESFET process is employed. The
device is packaged in the PFP鈥?6 Power Flat Package which gives excellent
thermal performance through a solderable backside contact.
鈥?/div>
Usable Frequency Range 800 to 1000 MHz
鈥?/div>
Typical Output Power:
36.0 dBm @ 5.8 Volts
35.0 dBm @ 4.8 Volts
31.5 dBm @ 3.6 Volts
鈥?/div>
48% Minimum Power Added Efficiency
鈥?/div>
Low Parasitic, High Thermal Dissipation Package
鈥?/div>
Order MRFIC0913R2 for Tape and Reel Option.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
鈥?/div>
Device Marking = M0913
MRFIC0913
900 MHz
GSM CELLULAR
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 978鈥?2
(PFP鈥?6)
ABSOLUTE MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
Supply Voltage
RF Input Power
Gate Voltage
Ambient Operating Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Symbol
VD1, VD2
Pin
VSS
TA
Tstg
R
胃JC
Value
9
15
鈥?
鈥?0 to + 85
鈥?65 to +150
10
Unit
Vdc
dBm
Vdc
擄C
擄C
擄C/W
GND 9
VD1 10
GND 11
VG2 12
VG1 13
GND 14
RF IN 15
N/C 16
8
7
6
5
4
3
2
1
N/C
VD2
GND
RF OUT
RF OUT
GND
VSS
GND
Pin Connections and Functional Block Diagram
REV 1
漏
Motorola, Inc. 1996
MOTOROLA RF DEVICE DATA
MRFIC0913
1
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