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MRFG35010MT1 Datasheet

  • MRFG35010MT1

  • Gallium Arsenide PHEMT

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRFG35010MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
鈥?/div>
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power 鈥?900 mW
Power Gain 鈥?10 dB
Efficiency 鈥?28%
MRFG35010MT1
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
Freescale Semiconductor, Inc...
鈥?/div>
9 Watts P1dB @ 3.55 GHz
鈥?/div>
Excellent Phase Linearity and Group Delay Characteristics
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 466 - 02, STYLE 1
PLD - 1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Symbol
R
胃JC
Value
15
22.7
(2)
0.15
(2)
-5
33
- 65 to +150
175
- 20 to +85
Unit
Vdc
Watts
W/擄C
Vdc
dBm
擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Max
6.6
(2)
Unit
擄C/W
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22 - A113
(1) For reliable operation, the operating channel temperature should not exceed 150擄C.
(2) Simulated.
Rating
1
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRFG35010MT1
1

MRFG35010MT1 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • pHEMT FET

  • 3.55GHz

  • 10dB

  • 12V

  • 2.9A

  • -

  • 180mA

  • 9W

  • 15V

  • PLD-1.5

  • PLD-1.5

  • 帶卷 (TR)

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