音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

MRFG35005NT1 Datasheet

  • MRFG35005NT1

  • Gallium Arsenide PHEMT RF Power Field Effect Transistor

  • 12頁

  • FREESCALE

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預覽

Freescale Semiconductor
Technical Data
Document Number: MRFG35005MT1
Rev. 2, 5/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
鈥?/div>
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power 鈥?450 mWatt
Power Gain 鈥?11 dB
Efficiency 鈥?25%
鈥?/div>
4.5 Watts P1dB @ 3.55 GHz
鈥?/div>
Excellent Phase Linearity and Group Delay Characteristics
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
N Suffix Indicates Lead - Free Terminations
鈥?/div>
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35005NT1
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Value
15
10.5
(2)
0.07
(2)
-5
30
- 65 to +150
175
- 20 to +85
Unit
Vdc
W
W/擄C
Vdc
dBm
擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Class AB
Symbol
R
胃JC
Value
14.2
(2)
Unit
擄C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
擄C
1. For reliable operation, the operating channel temperature should not exceed 150擄C.
2. Simulated.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRFG35005NT1 MRFG35005MT1
1
RF Device Data
Freescale Semiconductor

MRFG35005NT1 產(chǎn)品屬性

  • 1,000

  • 分離式半導體產(chǎn)品

  • RF FET

  • -

  • pHEMT FET

  • 3.55GHz

  • 11dB

  • 12V

  • 1.7A

  • -

  • 80mA

  • 4.5W

  • 15V

  • PLD-1.5

  • PLD-1.5

  • 帶卷 (TR)

MRFG35005NT1相關型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術客服：

0571-85317607

網(wǎng)站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！