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MRFG35003M6T1 Datasheet

  • MRFG35003M6T1

  • GALLIUM ARSENIDE PHEMT

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFG35003M6T1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
鈥?/div>
Typical W鈥揅DMA Performance: 鈥?2 dBc ACPR, 3.55 GHz, 6 Volts,
I
DQ
= 180 mA
Output Power 鈥?450 mWatts
Power Gain 鈥?9 dB
Efficiency 鈥?24%
鈥?/div>
3 Watts P1dB @ 3.55 GHz
鈥?/div>
Excellent Phase Linearity and Group Delay Characteristics
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003M6T1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
Freescale Semiconductor, Inc...
CASE 466鈥?2, STYLE 1
PLD鈥?.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Gate鈥揝ource Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Value
8
22.7
(2)
0.15
(2)
鈥?
24
鈥?65 to +150
175
鈥?20 to +85
Unit
Vdc
Watts
W/擄C
Vdc
dBm
擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
6.6
(2)
Unit
擄C/W
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22鈥揂113
(1) For reliable operation, the operating channel temperature should not exceed 150擄C.
(2) Simulated.
Rating
1
REV 1
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRFG35003M6T1
1

MRFG35003M6T1 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • pHEMT FET

  • 3.55GHz

  • 9dB

  • 6V

  • 2.9A

  • -

  • 180mA

  • 3W

  • 8V

  • PLD-1.5

  • PLD-1.5

  • 帶卷 (TR)

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