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MRF9811T1 Datasheet

  • MRF9811T1

  • HIGH FREQUENCY GaAs FET TRANSISTOR

  • 4頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9811T1/D
Advance Information
The RF Small Signal Line
Gallium Arsenide
MRF9811T1
21 dBm, 5.8 V
HIGH FREQUENCY
GaAs FET TRANSISTOR
N鈥揅hannel Depletion鈥揗ode MESFET
Designed for use in driver stages of moderate power RF amplifiers to 2 GHz.
Typical applications are cellular radios and personal communication
transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT.
鈥?/div>
Performance Specifications at 900 MHz, 5.8 V:
Output Power = 21 dBm
Power Gain = 14 dB Min
Drain Efficiency = 55% Min
鈥?/div>
Plastic Surface Mount Package
鈥?/div>
Order MRF9811T1 for Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
CASE 318A鈥?5, STYLE 7
(SOT鈥?43)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 50擄C
Derate above 50擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Value
10
5
0.7
0.77
7.7
鈥?55 to +150
150
Unit
Vdc
Vdc
Adc
W
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
130
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate鈥揇rain Breakdown Voltage
(IGD = 0.25 mA, Source Open)
Zero Gate Voltage Drain Current
(VDS = 1.5 Vdc, VGS = 0)
Gate鈥揝ource Leakage Current
(VGS = 鈥?.0 Vdc, Drain Open)
V(BR)GDO
IDSS
IGSO
15
0.35
鈥?/div>
鈥?/div>
鈥?/div>
0.5
鈥?/div>
鈥?/div>
10
Vdc
Adc
碌Adc
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA RF
Motorola, Inc. 1997
DEVICE DATA
MRF9811T1
1

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