Available in Tape and Reel Packaging.
鈥?/div>
Device Marking = 9745
CASE 449鈥?2, STYLE 1
(PLD鈥?)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 50擄C
Derate above 50擄C
Storage Temperature Range
Operating Temperature Range
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
35
25
鹵
10
2
10
100
鈥?65 to +150
150
Unit
Vdc
Vdc
Vdc
Adc
W
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
10
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Leakage Current
(VDS = 35 V, VGS = 0)
Gate鈥揝ource Leakage Current
(VGS = 5 V, VDS = 0)
IDSS
IGSS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
1
碌A(chǔ)dc
碌A(chǔ)dc
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF9745T1
1
next
MRF9745T1相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Advanced Semiconductor [NPN SILICON RF TRANSISTOR]
ASI
-
英文版
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MICROSEMI
-
英文版
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MICROSEMI ...
-
英文版
NPN SILICON RF TRANSISTOR
ASI
-
英文版
NPN SILICON RF TRANSISTOR
ASI [Advan...
-
英文版
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MICROSEMI
-
英文版
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MICROSEMI ...
-
英文版
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MICROSEMI
-
英文版
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MICROSEMI ...
-
英文版
Motorola, Inc [NPN Silicon Low Noise, High-Frequency Transi...
-
英文版
NPN SILICON RF TRANSISTOR
ASI
-
英文版
NPN SILICON RF TRANSISTOR
ASI [Advan...
-
英文版
Motorola, Inc [The Rf Line NPN Silicon High-Frequency Trans...
-
英文版
RF POWER FIELD EFFECT TRANSISTORS
-
英文版
RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA [...
-
英文版
RF POWER FIELD EFFECT TRANSISTORS
-
英文版
RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA [...
-
英文版
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
-
英文版
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
MOTOROLA [...
-
英文版
RF POWER FIELD EFFECT TRANSISTORS